Analytical Predictive Modeling for the Scalability Study of DG and GAA MOSFETs

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Analytical Predictive Modeling for the
Scalability Study of DG and GAA MOSFETs

• Hamdy Abd El-Hamida, Benjamin Iñigueza, Jaume
  Roigb
• a Dept. dEnginyeria Electrònica, Elèctrica i
  Automàtica, Universitat Rovira i Virgili, 43007
  Tarragona, Spain. E-mail hamdy_at_abd.cat
• bLAAS, CNRS, 31007 Toulouse Cedex 4, France

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Modeling Summary

• We have developed analytical scalable models of
  the threshold voltage roll-off, DIBL and
  subthreshold swing of nanoscale Gate All Around
  (GAA) and Double-Gate (DG) MOSFETs
• The models are derived from an analytical
  solution of the 2D or 3D Poissons equation,
  obtained using variable separation
• Very good agreement with numerical 2D and 3D
  simulations have been observed

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Modeling Applications

• The models have been used to compare the
  performance of nanoscale GAA and DG MOSFETs
• We have determined the dimensions of the devices
  necessary to obtain a certain value of the
  subthreshold swing
• It results that the GAA device can be 33 shorter
  than the DG MOSFET, and with a 10 mV/V lower DIBL