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Integer Quantum Hall Effect

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... observed that the Hall resistance (RH ) increases linearly with the applied magnetic field B. ... without any change in occupation of the extended states, ... – PowerPoint PPT presentation

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Title: Integer Quantum Hall Effect


1
Integer Quantum Hall Effect
  • By
  • Priyanka Milinda Rupasinghe

2
Discovery of Hall Effect
  • When an electric current passes through a metal
    strip with a perpendicular magnetic field, the
    electrons are deflected towards one edge and a
    potential difference is created across the strip.
    This phenomenon is termed the Hall Effect.

It was discovered in 1879 by an American
physicist E.H. Hall. And this effect has now been
thoroughly studied and well understood in common
metals and semiconductors.
  • In Hall Effect experiments, It is observed that
    the Hall resistance (RH ) increases linearly with
    the applied magnetic field B.
  • Entirely new phenomena appear when the Hall
    effect is studied in two-dimensional electron
    systems.

3
Discovery of Quantum Hall Effect
  • In the Spring of 1980 von Klitzing showed
    experimentally that the Hall conductivity has
    discrete values in two-Dimensional systems.
  • As a result, in 1985, Klaus von Klitzing was
    awarded Nobel Prize in Physics for the discovery
    of quantum Hall effect.

Klaus von Klitzing
4
The Landau Levels
  • In a strong magnetic field the energy of the
    electron is quantized.
  • These discrete energy values are given by

n 0,1,2,
Where is the Cyclotron frequency
5
Longitudinal and Hall conductivities
  • In the presence of a steady magnetic field, the
    conductivity and resistivity become tensors.

Here, and are called the
Longitudinal and Hall
conductivities
6
Measurement of the Hall and Longitudinal
Resistivities
7
The Filling Factor
Where e is the electronic charge and h is the
plank constant.
This indicates that for any fixed value of the
magnetic field , is the
appropriate unit for the electron concentration
(n). Here ? is called the filling factor.
8
Experimental Results
According to an experiment done by V. Klitzing,
the Hall resistivity of silicon MOSFETs as a
function of the gate voltage (which is
proportional to the electron concentration) is a
constant within a certain range around each
integer value of the filling factor.
Simultaneously, in these regions, the
longitudinal conductivity was found to be
vanishing and the Hall conductivity remains a
constant.
9
A schematic view of the quantum Hall effect in
terms of the conductivities as functions of the
filling factor
10
Observed QHE in medium mobility ( 5200 cm2/Vs )
GaAs heterostructures at 60mK
11
Explanation of IQHE
  • When the Fermi energy is in a gap, i.e. between
    the fields (a) and (b) in the diagram, Hall
    resistance cannot change from the quantized value
    for the whole time, and so a plateau results.
  • If the Fermi energy in the Landau level, i.e.
    the field (c) is reached in the diagram, it is
    possible to change the voltage and a finite value
    of resistance will be appeared. In this situation
    the step like behavior of the Hall conductivity
    is observed.

12
In the presence of impurity, the density of
states will evolve from sharp Landau levels to a
broader spectrum of levels.
  • There are two kinds of energy levels, namely
    localized and extended states
  • As the density is increased (or the magnetic
    field is decreased), the localized states are
    gradually fill up without any change in
    occupation of the extended states, thus without
    any change in the Hall resistance. For these
    densities the Hall resistance is on a step in the
    Figure(right) while longitudinal resistance
    vanishes (at zero temperature).
  • When the Fermi level passes through the
    extended state (Or the Fermi level is in the core
    of the extended state) the longitudinal
    resistance becomes appreciable and the hall
    resistance makes its transition from one plateau
    to the next as in figure(right)

13
Schematic Picture of the Quantum Hall Effect
14
Benefits of IQHE
  • The integer quantum Hall effect is now used as
    the international standard of resistance.
  • The incredibly accurate quantization of the Hall
    resistance to approximatelyone part in 108 makes
    this possible.
  • Finding the structure constant
  • The constant e2/h is proportional to the fine
    structure constant in electrodynamics, so the
    quantum Hall effect provides us an independent
    way of accurately measuring this constant.

15
REFRENCES
  • D. Yoshioka, The Quantum Hall Effect.
  • M.JanBen, O. Viehweger,U. Fastenrath and J. Hajdu
    Introduction to the Theory of the Integer Quantum
    Hall Effect.
  • T. Chakraborty and P.Pietilainen The Quantum Hall
    Effects (Fractional and Integral)
  • www.pha.jhu.edu/qiuym/qhe/node2.html
  • nobelprize.org/physics/laureates/1985/press.html
  • www.warwick.ac.uk/phsbm/qhe.htm
  • www.pha.jhu.edu/qiuym/qhe/node4.html

16
THANK YOU
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