Simulation Status and Problems for SiPM/APD - PowerPoint PPT Presentation

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Simulation Status and Problems for SiPM/APD

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Pulse height for ~1-2 pe expected. 5. Alexandre Vaniachine ... simulations tools the SiPM Model - we could become the first who grabbed that ... – PowerPoint PPT presentation

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Title: Simulation Status and Problems for SiPM/APD


1
Simulation Status and Problems for SiPM/APD
  • Pico-Second Timing Simulation Workshop
  • University of Chicago, Chicago, USA
  • December 12, 2006
  • Alexandre Vaniachine, Robert Wagner (Argonne)

2
Excellent Idea
  • I like the idea to develop SiPM simulations code
    very much
  • Indeed, these new devices does not have any
    commonly adopted simulations tools in the public
    domain

3
Principle of Operation of SiPMT
(credit Claudio Piemonte,
ITC-irst)
diode structure
depletion width
V
n
p-
p
E
electric field in the reversed bias diode
full depletion
V lt VAPD gt photodiode
1 collected pair/generated pair VAPD lt V
ltVBD gt APD ltMgt
collected pairs/generated pair V gt VBD
gt Geiger-mode APD inf. collected
pairs/generated pair
4
Simple SiPM Features to be Reproduced by
Simulations
  • Start with the single SiPM cell model
  • Reproduce the measured separated peaks
  • Depending on the temperature, integration (S/H)
    time, etc.

5
Simple SiPM Features to be Reproduced by Our SiPM
Model (2)
  • Reproduce the saturation measurements

Line is a two parameter fit to
Measurement of saturation gives alternate
estimate of gain
6
Advanced SiPM Features to be Reproduced by Our
SiPM Model
  • Reproduce the cross-talk measurements

7
Advanced SiPM Features to be Reproduced by Our
SiPM Model (2)
  • Reproduce high-rate behavior affected by the
    dead-time in fired cells
  • Reproduce the gain measurements from the current
    measurement
  • Simulate the efficiency
  • Simulate the timing performance (vs. number of
    photons)
  • etc.

8
Conclusions
  • If we will develop common SiPM simulations tools
    the SiPM Model - we could become the first who
    grabbed that growing research area
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