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MPW Design Introduction Course Part3'

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The bulk silicon etching (4) Lateral Displacement (LD) tolerances depends on tolerances of: ... Feature edge after etching. 12. Mask naming conventions ... – PowerPoint PPT presentation

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Title: MPW Design Introduction Course Part3'


1
MPW Design Introduction Course - Part3.
Design - Part I
Resonating Structures, CMM
2
Contents Design Part I
  • Processes at SensoNor
  • Mask-related conventions
  • Layout rules Design limitations
  • Specific

3
Design limitations
  • Defined bond pad area
  • Minimum width of the anodic bonding area
  • Minimum width ofthe glass cavities
  • Width of the dicingstreet

4
The bulk silicon etching
5
The bulk silicon etching (2)
Isolated p-substrate
n-epi


n-well
Bias
p-substrate
Etch mask
Etching solution
6
The bulk silicon etching (3)
7
The bulk silicon etching (4)
  • Lateral Displacement (LD) tolerances depends on
    tolerances of
  • Underetch
  • Backside mask
  • Alignment
  • Oxide mask definition
  • Angle mask alignment
  • Wafer orientation
  • Wafer flat orientation
  • Wafer thickness uniformityed Etch Depth


8
The Anodic Bonding
9
The release etch (1)
  • Etched area lt 30 die area

10
The release etch (2)
11
Micromachining of glass
12
Conventions (1)
  • Mask naming conventions
  • Functionality of the layer
  • BUCON
  • NOWEL, NOSUR
  • Projection masks
  • BETCH
  • Mask polarities
  • Straight
  • Reverse

13
Conventions (2)
  • Mirrored masks

14
Mask level layout rules (1)
  • Intra-layer rules
  • Space
  • Line
  • Notch

15
Examples
BETCH
NOWEL
  • Line, bulk area (a)
  • Space, bulk area (b)
  • Line, bulk etched area (c)
  • Space, bulk etched area (d)

16
Mask level layout rules (2)
  • Inter-layer rules
  • MASKA covers MASKB
  • MASKA covers border MASKB

17
Mask level layout rules (3)
  • Inter-layer rules
  • MASKA separated from MASKB
  • coincidence is allowed
  • No coincidenceMASKA and MASKB

18
Mask level layout rules (4)
  • Inter-layer rules
  • MASKA separatedfrom border MASKB
  • MASKA overlapsMASKB

19
Mask level layout rules (5)
  • Multi-layer rules
  • Examples
  • MASKA covers MASKB in MASKC
  • MASKA covers MASKB in
  • MASKC-MASKD stacked feature

20
Examples (1)
  • Space BURES (a)
  • BURES separated fromNOWEL (b)
  • No coincidence BURESand NOWEL
  • BURES overlaps BUCONcoincidence (c)
  • for electrical connection

21
Examples (2)
  • NOWEL covers BUCON in NOWEL (a)
  • BUCON separated from NOWEL outside NOWEL (b)

22
Examples (3)
  • SUCON overlaps BUCONcoincidence (a) for
    electrical connection
  • SUCON separated fromBUCON (b) for electrical
    insulation

23
Design Part 1
  • End of this chapter
  • Questions or comments?
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