A 3MPixel Multi-Aperture Image Sensor with 0.7mm Pixels in 0.11mm CMOS - PowerPoint PPT Presentation

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A 3MPixel Multi-Aperture Image Sensor with 0.7mm Pixels in 0.11mm CMOS

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A 3MPixel MultiAperture Image Sensor with 0'7mm Pixels in 0'11mm CMOS – PowerPoint PPT presentation

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Title: A 3MPixel Multi-Aperture Image Sensor with 0.7mm Pixels in 0.11mm CMOS


1
A 3MPixel Multi-Aperture Image Sensor with 0.7mm
Pixels in 0.11mm CMOS
  • Keith Fife, Abbas El Gamal, H.-S. Philip Wong
  • Stanford University, Stanford, CA

2
Outline
  • Introduction
  • Chip Architecture
  • Detailed Operation
  • FT-CCD array
  • Multi-Aperture array
  • Column ADC
  • Results
  • Summary

3
Multi-Aperture Image Sensor
Imager sub-array with integrated optics
Imager sub-arrays integrated to form
multi-aperture array
4
Conventional vs. Multi-Aperture
Conventional imaging
Multi-aperture imaging
K. Fife, A. El Gamal and H.-S. P. Wong, CICC
2006, p281-284
5
Multi-Aperture Imaging
6
Benefits of Multi-Aperture Imaging
  • Capture depth information
  • Close proximity imaging
  • Achieve better color separation
  • Reduce requirements of objective lens
  • Increase tolerance to defective pixels

7
Depth from Multi-Aperture
8
Why Use Small Pixels?
  • Depth resolution improves with pixels smaller
    than the spot size
  • Spatial resolution is limited by the spot size
  • Depth resolution is limited by accuracy in
    localization of the spot

9
Feature Localization vs. Pixel Size
Pixels
Poor location accuracy
High location accuracy
10
Color with Multi-Aperture
11
Fabricated Multi-Aperture Imager
  • 0.11mm CMOS (TSMC)
  • Chip size 3.0 x 2.9mm2
  • 166 x 76 aperture array
  • 16 x 16 pixel FT-CCD per aperture
  • Pixel size 0.7 mm
  • Max frame rate 15fps
  • ADC resolution 10 bit
  • Power 10.45mW

Local optics are not integrated on this chip.
12
Block Diagram of Fabricated Chip
13
16 x 16 FT-CCD schematic
K. Fife, A. El Gamal and H.-S. P. Wong, IEDM
2007, p1003-1006
14
CCD Cross Sections
15
Operation
  • Flush
  • Integrate
  • Frame Transfer
  • Horizontal Readout

16
Operation (Flush)
17
Operation (Flush)
18
Operation (Integrate)
19
Operation (Integrate)
20
Operation (Frame Transfer)
21
Operation (Frame Transfer)
22
Operation (Horizontal Transfer)
23
Operation (Horizontal Transfer)
24
Potential Profile Along Channel
25
Potential Profile Along Channel
26
Potential Profile Along Channel
27
Potential Profile Along Channel
28
Potential Profile Along Channel
29
Potential Profile Along Channel
30
Potential Profile Along Channel
31
Potential Profile Along Channel
32
Interlaced Mode (Even Field)
33
Interlaced Mode (Odd Field)
34
Vertical to Horizontal Transfer
Even column
Odd column
to H-CCD
to H-CCD
35
Vertical to Horizontal Transfer
Even column
Odd column
36
Vertical to Horizontal Transfer
Even column
Odd column
37
Vertical to Horizontal Transfer
Even column
Odd column
38
Vertical to Horizontal Transfer
Even column
Odd column
39
Chip Operation
40
Chip Operation (Integrate)
integrated charge
41
Chip Operation (Frame Transfer)
42
Chip Operation (Reset FD)
reset level
43
Chip Operation (Read Rowlt0gt)
44
Chip Operation (Read Rowlt1gt)
45
Chip Operation (Transfer Charge)
46
Chip Operation (Charge Rowlt0gt)
47
Chip Operation (Charge Rowlt1gt)
48
Chip Operation (Shift Charge)
49
Column ADC Schematic
50
Measured Photon Transfer Curve
Full Well (3500 e-)
Conversion Gain (165mV/e-)
Noise Floor (5 e-)
PRNU (2)
51
Measured Pixel Characteristics
Well capacity 3500 e-
Conversion gain 165 ?V/e-
Sensitivity at 550 nm 0.15V/lux-sec
QE at 450, 550, 650 nm 20, 48, 65
Pixel read noise 5 e- rms (1mV)
Dark current at RT 33 e-/sec (5.5 mV/sec)
DSNU 35 rms
PRNU 2 rms
Peak SNR 35 dB
Dynamic range 57 dB
52
Measured ADC Linearity
Single Column (10-b)
All Columns (10-b)
Input Range 1V
53
Measured ADC Noise
Image at constant ADC test input level
FPN (10-b LSBs)
Temporal (10-b LSBs)
54
Sample Image
55
Summary
  • Designed and characterized the first integrated
    multi-aperture image sensor
  • Achieved good imaging performance with 0.7mm
    pixels
  • FT-CCD structure in deep submicron CMOS
  • Ripple charge transfer
  • Extensible architecture well suited for
    ultra-high pixel count imagers
  • Many potential applications or benefits
  • Depth
  • Close proximity imaging
  • Color imaging with good spectral separation
  • High defect tolerance
  • Relaxed external optical requirements
  • Results suggest that further scaling while
    maintaining performance is possible

56
Acknowledgements
  • TSMC
  • The authors thank C.H. Tseng, David Yen, C.Y. Ko,
    J.C. Liu, Ming Li, and S.G. Wuu for process
    customization and fabrication
  • Hertz Foundation
  • Fellowship support for Keith Fife
  • Lane Brooks, MIT EECS
  • Collaboration on the design of the testing
    platform and software system
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