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Memories II

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Hodges, H. G. Jackson, R. A. Saleh, 'Analysis and Design of Digital Integrated ... M7 or M9 on if Gate=1. GND passes and waits for Tagline signals. In Original Cell ... – PowerPoint PPT presentation

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Title: Memories II


1
Memories II
  • Dr. T.Y. Chang
  • NTHU EE
  • 2007.12.18

2
Contents
  • CAM
  • FPGA
  • Flash
  • FRAM
  • Ref. Book D.A. Hodges, H. G. Jackson, R. A.
    Saleh, "Analysis and Design of Digital Integrated
    Circuits," 3rd Ed., McGraw Hill, 2004. Chapter 9.

3
Content-Addressable Memory
  • Called Associative Memory
  • Lookup Scheme
  • Tag Previous stored keyword
  • Store randomly
  • SRAM architecture
  • Used in Cache
  • As Internet routing
  • Table

4
CAM Lookup Array
  • ? Diff XOR1
  • NMOS on
  • Machi 0
  • ? Same XOR0
  • NMOS off
  • Machii1 (precharged)
  • Select only one or none row

5
CAM Cell
  • M7, M8, M9, M10
  • XOR
  • Compare (q, q) with (Tagline, Tagline)
  • 20 to 30 gt Area of SRAM cell
  • Taglines
  • Must start low
  • To avoid discharge in precharge phase

6
SRAM Array in CAM
  • Invalid rows if not fully used
  • Timing is critical since Matchlines are initially
    all prechaged
  • Write data same as SRAM operations except
    Tagelines start low

7
Modified CAM Cell
  • Improve Speed
  • M7 or M9 on if Gate1
  • GND passes and waits for Tagline signals
  • In Original Cell
  • Tagline signals arrive
  • Then GND can passes

Original Cell
8
Field-Programmable Gate Array
  • Rapid Implementation
  • Verify function but not timing
  • Overall architecture
  • Routing Channel
  • I/O blocks
  • PLBs

9
FPGA Architecture
10
PLB Structure
11
PLB Structure Example
12
Programmable Connections
13
I/O Block
14
Flash Memory
  • NOR Structure
  • Write Hot Carriers Injection
  • Erase Fowler-Nordheim Tunneling

15
Write and Erase
16
Flash Read Operation
17
NAND Flash
18
FRAM
  • Ferroelectric material
  • Nonvolatile
  • Destructive read-out
  • Need write back similar to DRAM
  • Drawback (not semiconductor memory)
  • Cost, Speed, Size
  • Advantages
  • Less power
  • high density/reliability

19
FRAM
  • Cap Perovskite Crystal be polarized in 2
    directions
  • Loigc-1 Vcc
  • Logic-0 ?Vcc

20
Summary of Semiconductor Memories
Memory EPROM EEPROM Flash FRAM
Prog type HCI FN HCI/FN Polarize
Erase typ UV FN FN Polarize
Erase Res. Full Mem Bit/Byte Block Bit
Endurance Cycle 102 105 -106 106 1010-1012
Cell Size S L S S
Speed Fast Med Fast Fast
Power High Med Low Low
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