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Collective Charge Excitations below the Metal-to-Insulator Transition in BaVS3

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Title: Collective Charge Excitations below the Metal-to-Insulator Transition in BaVS3


1
Collective Charge Excitations below the
Metal-to-Insulator Transition in BaVS3
  • Tomislav Ivek, Tomislav Vuletic, Silvia Tomic
  • Institut za fiziku, Zagreb, Croatia
  • Ana Akrap, Helmuth Berger, László Forró
  • Ecole Polytechnique Fédérale, Lausanne,
    Switzerland
  • T. Ivek et al., Phys. Rev. B 78, 035110 (2008).

2
Out line
  • Chain sulfide BaVS3
  • Low-frequency dielectric spectroscopy complex
    dielectric function in the insulating phase of
    BaVS3
  • Nature of the insulating phase ground state?
  • Collective excitations of the orbital ordering

3
BaVS3
  • Consists of VS3 chains separated by Ba atoms
  • Neighboring VS6 octahedra share a face, stack
    along c-axis
  • Room Temperature primitive hexagonal unit
  • 2 formula units per primitive cell
  • At 240 K transition to orthorhombic structure
  • At 70 K monoclinic structure
  • Internal distortion of VS6 octahedra
  • Tetramerization of V4 chains

S
Ba
V
Lechermann et al., PRB 76, 085101 (2007)
4
BaVS3
  • 2 electrons in
  • a wide A1g band (dz2)
  • narrow Eg1, Eg2 bands (et2g)
  • Filling of bands governed by Coulomb repulsion,
    local Hunds rule coupling
  • A1g, Eg1 close to half-filling
  • Metal-to-insulator phase transition at TMI70 K
  • Diffuse x-ray scattering Fagot et al., PRL 90,
    196401 (2003)
  • pretransition fluctuations up to 170 K
  • qc 2kF (A1g) superstructure
  • characteristic for a Peierls transition and
    Charge Density Wave ground state
  • No charge disproportionation in anomalous x-ray
    scattering! - Fagot et al., PRB 73, 033102 (2006)
  • Magnetic transition at T?30 K incommensurate
    magnetic ordering (Nakamura et al., J. Phys. Soc.
    Jpn. 69, 2763 (2000), Mihály et al., PRB 61,
    R7831 (2000))

Lechermann et al., PRB 76, 085101 (2007) LDA
DMFT
  • Nature of MI transition?
  • Ground state?

5
Samples
  • Needle-like single crystals grown along c-axis,
    hexagonal cross-section
  • 3 x 0.25 x 0.25 mm3
  • Important quality check suppression of
    insulating phase at 20 kbar
  • Contacts
  • evaporated 50 nm chrome
  • evaporated 50 nm gold
  • DuPont silver paint 6838 cured at 350C for 10
    min in vacuum

6
Low-Frequency Dielectric Spectroscopy
Ivek et al., PRB 78, 035110 (2008)
  • 0.01 Hz 10 MHz
  • Complex conductivity -gt
  • Complex dielectric function
  • Insulating phase
  • single symmetrically widened overdamped loss peak
  • reminiscent of a Charge Density Wave phason
    response (Littlewood, PRB 36, 3108 (1987))
  • What is the connection of this relaxation with
    the MI transition?

7
Metal-InsulatorPhase Transition
  • TMI 67K peak in dc resistivity derivation
  • dc gap 2?500 K corresponds to the optical gap
    (Kézsmárki et al., PRL 96, 186402 (2006))
  • Peak in ?e at the same T!
  • Screening by free charge carriers

8
CDW Phasons?
  • Do we have a long-wavelength, phason response?
  • Screening by free charge carriers Littlewood
  • Unexpected ?e behavior
  • CDW ?e(T)const.107
  • Lack of a significant non-linear dc conductivity
    no sliding
  • Another DW phason fingerprint a narrow microwave
    pinned mode
  • no experimental results

9
Hopping conduction?
  • Cross-over frequency far above the observed
    dielectric response
  • Optical conductivity not enhanced compared to dc
    values
  • Not a candidate

10
Ferroelectric nature of the MI transition?
  • Below TMI noncentrosymmetric
  • structure with a polar axis in the
  • reflection plane of VS3 chains
  • High polarizability of electron
  • system coupled to V4 displacements
  • could induce high ?e
  • BVS (Fagot et al., Solid State Sci. 7, 718
    (2005)) some charge disproportionation at low T
  • But, overestimated due to a nonsymmetric V4
    environment, thermal contraction, imprecise
    atomic coordinates (Foury-Leylekian (2007))
  • Charge redistribution not larger than 0.01e
    (Fagot et al., PRB 73, 033102 (2006))
  • FE cannot explain our dielectric results

11
Orbital ordering?
  • No charge modulation in the insulating phase
  • Fagot et al., Lechermann et al. modulation of
    orbital occupancy
  • 51V NMR and NQR measurements suggest an orbital
    ordering below TMI that is fully developed only
    at Tx (Nakamura et al., PRL 79, 3779 (1997))
  • Magnetic susceptibility (Mihály et al., PRB 61,
    R7831 (2000)) lack of magnetic long-range order
    between TMI and T?
  • Magnetic anisotropy (M. Miljak, unpublished) AF
    domain structure below T?

Fagot et al., PRB 73, 033102 (2006)
12
Interpretation in the context ofOrbital Order
  • Primary order parameter for the MI phase
    transition
  • 1D Charge Density Wave instability
  • Orbital ordering transition happens at TMI,
    driven via structural changes, tetramerization
  • Domains of OO gradually develop in size with
    lowering temperature
  • OO coupled with spin degrees of freedom, drives
    the spin-ordering into an AF-like ground state
    below 30K domains persist!
  • Short-wavelength excitations of domain walls
  • ?e collective excitation density, i.e. number
    of domain walls
  • Domains consolidate number of domain walls
    diminishes with cooling
  • ?e decreases only down to T?
  • Below that a long-range spin ordering is
    established and ?e stays constant

13
Conclusion
  • BaVS3 system with orbital degeneracy
  • Metal-Insulator transition at TMI67 K
  • Magnetic transition at T?30 K
  • Low-Frequency Dielectric Spectroscopy the
    observed mode cannot be assigned to phason
    excitations
  • Density of excitations decreases from TMI with
    decreasing T, becomes constant under T?
  • Short-wavelength excitations lt-gt Orbital Ordering

14
Hopping
Dyre and Schroeder, Rev.Modern Physics 72, 873
(2000)
b) frequency marking the onset of ac conduction
ncross is roughly proportional to the dc
conductivity Barton-Nakajima-Namikawa
relation connects sdc and dielectric loss peak
frequency t0-1 sdc ? t0-1
- BaVS at low T sdc ? 10-5 10-6 W-1cm-1 ?
ncross expected at gt 1 MHz - For BaVS simple
calculation yields ncross (25 K) 360 MHz and
ncross (50 K) 3.8 GHz
T.Vuletic et al., Physics Reports 428, 169 (2006).
c) t00 ? 1ns is too long to be attributed to
quasi-particles
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Contacts
18
Low-Frequency Dielectric Spectroscopy
  • Complex conductivity as a function of frequency

19
Low frequencies, high impedances
  • Lock-in current preamplifier
  • Voltage output
  • Measuring the current
  • 10 mHz 3 kHz
  • Resistances up to 1 TO

sample
20
Autobalancing bridge
  • 10 Hz up to 100 MHz
  • Resistances up to 1 GO
  • Virtual ground avoids capacitive coupling to
    ground
  • Lc is kept at 0 potential by a feedback loop

21
Dana analysis
  • We measure complex admittance YGiB as a
    function of frequency
  • After subtracting the background, complex
    dielectric function is given by

22
Havriliak-Negami model dielectric function
  • ?? ?(0)-?(?) dielectric strength
  • ?0 mean relaxation time
  • (1-?) relaxation time distribution width

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