Fabrication and Characterization Facilities at Kostas Center for Micro and Nano Fabrication at North

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Fabrication and Characterization Facilities at
Kostas Center for Micro and Nano Fabrication at
Northeastern University

• The George J. Kostas Nanoscale Technology and
  Manufacturing Research Center is the primary
  facility for micro and nanofabrication at
  Northeastern University. Established through Mr.
  George J. Kostas '43 generous gift, The facility
  was completed in January 2005.
• The Kostas facility also serves as the main
  facility for the new NSF Nanoscale Science and
  Engineering Center for High-rate
  Nanomanufacturing (CHN) at Northeastern
  University, in partnership with the University of
  Massachusetts Lowell , and the University of New
  Hampshire . The facility is open to faculty,
  students, researchers, coop students, and
  external users. The facility provides support and
  materials based on user fees and has capabilities
  for processing 3,4, and 6 inch wafers as well as
  smaller parts.
• The center consists of 5000 square feet of class
  10, 1000, and 10000 clean room space

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Fabrication and Characterization Facilities at
Kostas Center for Micro and Nano Fabrication at
Northeastern University
Fabrication
Characterization
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Optical Lithography
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Optical Lithography
Limitations l determines the min. pattern width
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Electron Beam Lithography

• Nano pattern Generation System (NPGS)
• Capability down to 15nm patterns
• Continuous Pattern Writing for 45hours
• Control of the SEM using REMCON32
• Auto alignments and focus for tilt and stage
  movements
• Raith Beam Blanker
• Electrostatic Beam Blanker
• Operating Frequency is 100 kHz

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Nanonex NX 200 Nano Imprint Lithography
Nanonex NX200 Nano-imprinter
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Deposition PVD

• Mat Vac 8667
• 3 x 6.5 Targets
• RF/DC Sputtering

Available Targets Al, Ni, In2O3/SNO2, Mo, Cu,
Ti, Si, Si3N4, NiCr, C, Cr, TiW, Au, Ru
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Deposition Thermal Evaporation

• Up to 4 diameter substrates
• Water cooled substrate holder
• Two boat deposition
• Qualified for Cr, Au, MgF2,Ag,Al

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Deposition E-Beam Evaporation

• 4 pocket-6c.c.crucible/ e-beam deposition system
  can accept up to 4" substratesAvailable
  Material (Metals Only)
• Ti - Titanium
• Cr - Chromium
• Au - Gold
• Al - Aluminum
• Ni - Nickel

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Deposition Oxidation
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Deposition TVD, PDS2010
Biocompatibility Truly conformal material
(pin-hole free at 25 nm thickness) Thin film
dielectric Excellent moisture/chemical barrier
properties High mechanical strength
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Deposition Electroplating
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Dry Etching Ion Beam Milling
Vecco MicroEtch 6 Ion Beam Milling System Acc.
Voltage 1kV Shutter Current 1Amp
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Dry Etching ICP
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Anatech SP-100 Asher

• Used for removal of PR,PMMA
• Plasma de-scum post development prior to
  deposition
• Low temp inductively coupled plasma

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CMPGP Poli -400/500 CMP System
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Cleaning Wet Benches
H2O2/H2SO4 (12) Removal of some metals
Organic materials H2O/H2O2/H2SO4 (116)
Removal of metals HF/H2O (150) Removal of Oxide
layer
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Cleaning Ultrasonic
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Cleaning Megasonic
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Tencor Laser Surface Scanner
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Surface Analysis Optical Microscopes
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Surface Analysis, FESEM, Supra-25
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SEO Wafer Surface Analyzer, Pioneer-300
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Profile Analysis Quesant QScope 350 SPM
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Profile Analysis JSPM5200 SPM
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Profile Analysis PSIA -XE150 SPM
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Surface Profile Analysis DEKTAK 3030
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ZYGO NewView 6200Optical Profilometer

• Fast noncontact measurements
• Sub-nanometer Z resolution
• Leading-edge precision
• gage capability
• Enhanced optical imaging
• Various surfaces opaque,
• transparent, coated, uncoated,
• specular, and nonspecular
• Vertical Scan Range 150 µm
• Vertical Res. Up to 0.1 nm
• Lateral Res. 0.43 to 11.6 µm

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EDS Analysis PGT EDS detector
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Raman SpectroscopyJobin Yvon Lab Ram HR 800
When monochromatic radiation is incident upon a
sample then this light will interact with the
sample in some fashion. It may be reflected,
absorbed or scattered in some manner. It is the
scattering of the radiation that occurs which
can tell the Raman spectroscopist something of
the samples molecular structure.
Rayleigh
Raman

• The scattering process without a change of
  frequency is called Rayleigh scattering,
• A change in the frequency (wavelength) of the
  light is called Raman scattering. Raman shifted
  photons of light can be either of higher or lower
  energy, depending upon the vibrational state of
  the molecule.
• The Lab Ram has two excitation laser wavelengths
  of 532 and 785 nm
• Band analysis in the order of 0.3cm-1 to 1cm-1 is
  particularly suited to the HR mode

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Thickness analysis - Non-contact,
spectro-reflectometry
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Wire BondersMEI 1204B Ball Bonder
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V-I Characterization Microprobes
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V-I Characterization Microprobes IILow
Temperature/ High Vacuum

• Janis ST 500 Electrical Probe Station
• Electrical sample characterization in high vacuum
  or air or inert atmosphere. sample temperature
  4-420 K with LHe
• Probe sizes down to 7 microns. It has 4 x-y-z
  probes and 4 triax connectors on these probes.
• Frequency response is DC to 10 MHz.
• It also had the ability to apply a magnetic field
  using permanent magnets in plane and parallel at
  1000 Gauss
• The system is mounted on a vibration isolation
  mount and has a CCTV camera mounted to Lieca zoom
  microscope (not shown)

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Zyvex Nanomanipulator S-100
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Zeta Potential Measurement
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Wafer DicingMicroautomation 1006A Dicing Saw

• Dicing of semiconductor wafers
• Silicon or glass
• Up to 6 capability

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User Training And AccessIndustrial Users/Partners

• Equipment is booked and accessed online
• www.kostas.neu.edu
• Online site contains
• scheduler
• Training materials ,manuals, videos
• Process data
• Web cams to monitor usage
• Equipment statues
• Facility is open 24 /7 to NEU users
• Outside users can access site M-F 800-530 pm
• Outside/Industrial user fees are posted online
• Can work alone or partner with a professor
• Facility access and hands on training is proved
  after MOU and safety training completed

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Devices

• Micro Tensile Tester

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Devices

• 20 nm lines using ebeam lithography