Key Trends in Gallium Nitride Semiconductor Device Market

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Key Trends in Gallium Nitride Semiconductor
Device Market Gallium Nitride Semiconductor
Device Market by Device Type (Opto, Power, RF),
Wafer Size, Application (Power Drives, Supply and
Inverter, RF, Lighting and Laser), Vertical
(Telecommunication, Consumer, Automotive), and
Geography - Global Forecast to 2023
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The gallium nitride semiconductor device market
is expected to reach USD 22.47 Billion by 2023 at
a CAGR of 4.6 during the forecast period.   The
major factors that are expected to be driving the
market are the vast addressable market for
gallium nitride in consumer electronics and
automotive, wide bandgap property of gallium
nitride material encouraging innovative
applications, success of gallium nitride in RF
power electronics, and increasing adoption of
gallium nitride RF semiconductor device in
military, defense, and aerospace
application. Browse 104 Market Data Tables
and 53 Figures spread through 179 Pages and
in-depth TOC on "Gallium Nitride Semiconductor
Device Market - Global Forecast to 2023"
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Increasing adoption of GaN RF semiconductor
devices in military, defense, and aerospace
applications Increased use of RF power in
military, defense, and aerospace applications
acts as a driver for the growth of the gallium
nitride semiconductor device market. The use of
RF power devices in avionics and radar systems is
fueling the demand for GaN RF semiconductor
devices in military, defense, and aerospace
applications across the globe. In March 2015,
M/A-COM Technology Solutions Inc. launched a 650
W GaN on silicon carbide high-electron-mobility-tr
ansistor (HEMT) for L-band pulsed avionics
applications. The use of GaN to develop new and
advanced products is expected to contribute to
the growth of the gallium nitride semiconductor
device market. Ask PDF Brochure https//www.mark
etsandmarkets.com/pdfdownloadNew.asp?id698 Growi
ng competition from SiC in high-voltage
semiconductor applications Silicon carbide (Sic)
power semiconductor devices, since their launch
at the commercial level in 2001, have been trying
to penetrate the power semiconductor device
market globally by replacing pure silicon. These
devices offer improved power efficiency and
advanced power handling capacity in terms of
power rectification, power factor correction,
power amplification, and power transmission. In
high-voltage range applications, SiC
semiconductor devices are the best choice in
terms of their power efficiency and performance
than their GaN counterparts. For instance, at the
border-line voltages between medium and high
voltages, ranging from 700V to 1,200V, the
efficiency of GaN devices reduced considerably.
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The key players in this industry are Cree (US),
Samsung (South Korea), Infineon (Germany), Qorvo
(US), MACOM (US), Microsemi Corporation (US),
Analog Devices (US), Mitsubishi Electric (Japan),
Efficient Power Conversion (US), GaN Systems
(Canada), Exagan (France) , VisIC Technologies
(Israel), Integra Technologies (US), Transphorm
(US), Navitas Semiconductor (US), Nichia (Japan),
Panasonic (Japan), Texas Instruments (US),
Ampleon (Netherlands), Sumitomo Electric (Japan),
Northrop Grumman Corporation (US), Dialog
Semiconductor (UK), and Epistar
(Taiwan). Request Free Sample Pages https//www.
marketsandmarkets.com/requestsampleNew.asp?id698
APAC likely to hold the largest share of the
gallium nitride semiconductor device market
during the forecast period APAC is expected to
hold the largest share of the gallium nitride
semiconductor device market during the forecast
period owing to the increasing demand for LEDs in
various industries such as consumer and
enterprise, industrial, and automotive. Further,
EV charging, and electric vehicle production
markets, and increasing renewable energy
generation are driving the market in APAC.
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