High Frequency Compact Noise Modelling of MultiGate MOSFETs

1
High Frequency Compact Noise Modelling of
Multi-Gate MOSFETs

• A.Lázaro, A. Cerdeira, B. Nae, M. Estrada,
  B. Iñiguez
• Dpt. dEnginyeria Electrònica, Elèctrica i
  Automàtica, Universitat Rovira i Virgili, 43007
  Tarragona, Spain(benjamin.iniguez_at_urv.cat)
• CINVESTAV, Mexico City

2
Segmentation method

• We use the active line approach to extend the
  compact model to high frequency operation. It is
  based on splitting the channel into a number of
  elementary sections
• Our quasi-static small-signal equivalent
  circuit, to which we add additional microscopic
  diffusion and gate shot noise sources, is applied
  to each section
• Our charge control model allows to obtain
  analytical expressions of the local small-signal
  parameters in each segment

3
Segmentation Method
Frequency noise behaviour of Fmin Wfin10 nm,
Hfin30 nm, tox1.5 nm, tbox50 nm, 100
fingers,VGS-VTH0.5 V, VDS1 V at 10 GHz
Extrinsic noise parameters as function of gate
length for FinFET Wfin10 nm, Hfin30 nm,
tox1.5 nm, tbox50 nm, 100 fingers,VGS-VTH0.5
V, VDS1 V at 10 GHz.
4
Analytical explicit model
Single-piece compact expressions to model the
drain, gate current noise spectrum densities and
their correlations were derived for for DG
MOSFETs
Comparison of current noise densities and
imaginary part of correlation coefficient as
function of gate voltage calculated with the
segmentation method (?) and the singlepiece model
() for a DG MOSFET with L1 µm, tox2 nm, ts34
nm, VDS2V, f1 GHz).