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Recruitment for year 2005 Research Projects

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However, it is crucial to fabricate the p-type in order to make active circuit ... The fabricate of p-n heterostructure junctions composing of p-type colossal ... – PowerPoint PPT presentation

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Title: Recruitment for year 2005 Research Projects


1
Transparent Conducting Oxides and Oxide p-n
junctions for novel electronics
Transparent conducting oxides (TCO) thin films
are widely used in applications such as the
transparent electrodes of flat panel displays,
solar cells and touch panels. A combination of
the p and n types TCO to form a p-n junction can
result in qualities ideal for optoelectronics.
Some transparent oxides such as ZnO are also
known to be candidates for diluted magnetic
semiconductors, and have potential for
applications in spintronic devices. A number of
materials such as tin-doped indium oxide (ITO),
ZnO, and SnO2 are used in many optoelectronic
devices. ITO is currently the most widely used
TCO. However, as indium is a relatively scarce
element, the cost for ITO production is high. The
other drawback of ITO films is the lack of
chemical stability. The indium of an ITO layer
can diffuse into the organic materials, leading
to the degradation of light emitting diode (LED).
In addition the toxic nature of indium could be
hazardous to human beings and the environment.
At present almost all TCO thin films are n-type
semiconductors as it is extremely difficult to
fabricate a p-type TCO semiconductor. However, it
is crucial to fabricate the p-type in order to
make active circuit components such as diodes in
transparent circuits. This project has three aims
  • The fabrication of p type TCO thin films, such as
    CuAlO2 and ZnO by pulsed laser ablation and
    magnetron sputtering, and study on the physics of
    the electronic structure and the optoelectronic
    properties of the transparent p-type conducting
    doped CAO and ZnO thin films.
  • The fabrication of TCO p-n junctions, composing
    of p and n type ZnO thin films on glass, quartz,
    ZnO or a-Al2O3 substrates.
  • The fabricate of p-n heterostructure junctions
    composing of p-type colossal magneto resistance
    (CMR) thin film with n-type ZnO thin film. This
    type of junction could be modulated by external
    electric and magnetic field.

Recruitment for year 2005 Research Projects
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