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SiGe Semiconductor Devices for Cryogenic Power Electronics III

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Auburn University, Dept. of Electrical and Computer Engineering, Auburn, Alabama ... band-gap engineering (% of Ge) Devices can operate at all cryogenic ... – PowerPoint PPT presentation

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Title: SiGe Semiconductor Devices for Cryogenic Power Electronics III


1
SiGe Semiconductor Devices for Cryogenic Power
Electronics III
  • IMAPS Advanced Technology Workshop on Reliability
    of Advanced Electronic Packages and Devices in
    Extreme Cold Environments

Pasadena, 21-23 February 2005
2
Outline
  • The Team and Coordination
  • Goals Applications
  • Technical Objectives Approach
  • SiGe Cryo Power HBTs
  • SiGe Cryo Power Converters
  • Summary Plans

3
The Team
R. R. Ward, W. J. Dawson, L. Zhu, R. K.
Kirschman GPD Optoelectronics Corp., Salem, New
Hampshire G. Niu, R. M. Nelms Auburn University,
Dept. of Electrical and Computer Engineering,
Auburn, Alabama O. Mueller, M. J. Hennessy, E.
K. Mueller MTECH Labs./LTE, Ballston Lake, New
York R. L. Patterson, J. E. Dickman NASA Glenn
Research Center, Cleveland, Ohio A. Hammoud QSS
Group Inc., Cleveland, Ohio
4
Coordination
NASA SBIR Phase I and II DARPA STTR Phase I
5
Outline
  • The Team and Coordination
  • Goals Applications
  • Technical Objectives Approach
  • SiGe Cryo Power HBTs
  • SiGe Cryo Power Converters
  • Summary Plans

6
Overall Goal
  • Semiconductor devices (diodes and transistors)
  • For power management and distribution (PMAD)
  • Electrical power storage and transmission
  • Power conversion for motors/generators
  • For superconducting or cryogenic systems
  • Temperatures down to 20 K

7
NASA Interest
  • Cryogenic systems for spacecraft/aerospace
  • Cold Solar System sites
  • Fly-by, orbiting, landers, rovers, penetrators,
    ...
  • Propulsion systems
  • Power generation/storage/distribution systems

8
Solar System Temperatures
9
Temperatures for Spacecraft
10
Specific NASA Technical Goals
  • Demonstrate SiGe devices at cryogenic
    temperatures, down to 20 K
  • Device types SiGe HBTs, MOSFETs, IGBTs
  • Demonstrate SiGe superiority over Si devices for
    cryogenic power circuits

11
Coordination
Separate STTR Program from DARPA Phase I, June -
December 2004 with Auburn University
12
Coordination Goals
13
Outline
  • The Team and Coordination
  • Goals Applications
  • Technical Approach
  • SiGe Cryo Power HBTs
  • SiGe Cryo Power Converters
  • Summary Plans

14
Why SiGe?
  • Incorporate desirable characteristics of Si and
    Ge
  • Can optimize devices for cryogenic applications
    by selective use of Ge, Si and SiGe
  • SiGe provides additional flexibility through
    band-gap engineering ( of Ge)
  • Devices can operate at all cryogenic
    temperatures (as low as 1 K if required)
  • All device types work at cryogenic temperatures
  • Diodes
  • Field-effect transistors
  • Bipolar transistors
  • Compatible with standard semiconductor processing

15
Materials Comparison
16
P-N Junction (Diode) Forward Voltage
17
SiGe Bandgap
90 K
G. Theodorou et al., Structural, electronic, and
optical properties of strained SiGe alloys,
Phys Rev B, vo.l 50, pp. 18355-18359, 15 Dec.
1994.
18
Outline
  • The Team and Coordination
  • Goals Applications
  • Technical Objectives Approach
  • SiGe Cryo Power HBTs
  • SiGe Cryo Power Converters
  • Summary Plans

19
Cryo Power HBT Design Example
20
A Cryo Power HBT Die
4 mm
21
Cryo Power HBT Characteristics
LN
RT
2 A
1 A
20 V
20 V
?IB 5 mA Gain 75
?IB 0.5 mA Gain 500
22
Cryo Power HBT Characteristics
23
Outline
  • The Team and Coordination
  • Goals Applications
  • Technical Objectives Approach
  • SiGe Cryo Power HBTs
  • SiGe Cryo Power Converters
  • Summary and Plans

24
SiGe Boost Converter Circuit
24 V in
48 V out
Inductor
SiGe diode

Output capacitor
Input capacitor
Load
SiGe HBT

Drive circuit
10 300 K
Switching pulse
25
SiGe 100 W Cryo Boost Converter100 kHz, 24 V in,
48 V out
26
SiGe 100 W Cryo Boost ConverterBackside
27
Cryostat for Measuring ?100 W Circuits(variable
temperature 300 to 20 K)
4
Superinsulation
Cooling channel (inside Cu block)
8
Converter circuitry
Cu thermal mass/mounting block
Electrical feedthru
Stainless steel tubes
GHe vent
LHe vendors dewar
LHe
28
Cryostat for Measuring ?100 W Circuits
29
100 W SiGe Power Converter in Cryostat
30
SiGe 100 W Cryo Boost Converter Performance
31
Outline
  • The Team and Coordination
  • Goals Applications
  • Technical Objectives Approach
  • SiGe Cryo Power HBTs
  • SiGe Cryo Power Converters
  • Summary Plans

32
Summary
  • Cryogenic power conversion is of interest for a
    range of applications within NASA and elsewhere.
  • For cryogenic power conversion, SiGe devices are
    potentially superior to devices based on Si or
    Ge.
  • We have begun development of SiGe semiconductor
    devices (HBTs and MOSFETs) for cryogenic power
    applications.
  • We have designed, fabricated, and used SiGe HBTs
    in power converters operating at cryogenic
    temperatures and converting gt100 W.

33
Plans
  • Improve SiGe HBT characteristics (especially at
    cryo temps)
  • By simulation
  • On voltage
  • Off breakdown voltage
  • Switching speed
  • Compare power converter performance at cryogenic
    temperatures, comparing SiGe HBTs to Si BJTs
  • Design, fabricate and use SiGe MOSFETs in
    cryogenic power circuits
  • If practical, fabricate SiGe IGBTs
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