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Introduction to Optoelectronics Optical communication (3) Optical components

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Title: Introduction to Optoelectronics Optical communication (3) Optical components


1
Introduction to OptoelectronicsOptical
communication (3)Optical components
  • Prof. Katsuaki Sato

2
Optical components
  • Previous lectures
  • (1) Optical fibers
  • Transmission of light by total reflection
  • (2) Laser diodes
  • The pn-junction is forward biased
  • Above threshold current lasing occurs
  • High density of carriers and photons are confined
    in thin active layer (DH structure)

3
Component (3)Optical detectors
  • Using photodiode
  • Very fast response required
  • pin photodiode or Schottky junction photodiode
    are used
  • As material for photodiode InGaAs semiconductors
    are used

4
Photodiode
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5
Photodetection
  • Pin-PD
  • Schottky PD
  • Response is determined by capacitance of
    depletion layer where photocarrier flows
  • Thinning of depletion layer and reduction of
    junction area is necessary

pin photodiode
Schottky diode
Andrew Davidson, Focused Research Inc. and Kathy
Li Dessau, New Focus Inc.
6
Fundamentals of photodiode
  • Illuminate the pn junction
  • Electrons and holes are generated by an
    excitation across the gap
  • Generated electrons and holes are separated and
    drift to electrodes by diffusion potential

7
Component 4Fiber amplifier
  • Light signal traveling in optical fiber for 100
    km suffers 20 dB(1/100)attenuation. Therefore the
    light intensity should be recovered. Optical
    fiber amplifier is used for this purpose.
  • Optical amplifier consists of an erbium doped
    fiber (EDF) and a pumping laser. By introducing
    the strong pumping light to EDF the signal light
    can be amplified by stimulated emission from Er
    ion.

Asahi Glass Company HPhttp//www.agc.co.jp/news/20
00/0620.html??
8
Amplification by Er ion
  • EDF absorbs light with wavelength of 980nm
    or1480nm and emits infrared light with wavelength
    of1530nm. Optical amplification is possible
    utilizing stimulated emission of the 1530-nm
    luminescence.
  • Inputting pumping laser light into EDF, Er ion
    become excited by absorbing the laser light and
    the signal light stimulate to make a transition
    to the ground level emitting the light with
    wavelength around 1530 nm, which is close to the
    signal light wavelength. Thus the incident light
    is amplified utilizing the emitted light.
  • Luminescent intensity and spectrum width differ
    from sample to sample according to the
    concentration of doped Er-ion. The broader the
    bandwidth of the emission band the broader the
    bandwidth of communication.

From the Web-site of Asahi Glass Inc.
HPhttp//www.agc.co.jp/news/2000/0620.html
9
Component 5Optical isolator
  • Optical isolator is an optical component that
    makes the light direction oneway.
  • Operation of laser diodes (LD) and optical
    amplifiers (EDFA) become unstable and generate
    noise when returned light enters.
  • Optical isolator utilize Faraday effect to cut
    off the returned beam and stabilize the operation
    of lasers and amplifiers.

Shinkosha http//www.shinkosha.com/products/optica
l/
10
Polarization-dependent isolator
analyzer
Magnetic field
Returned beam
polarizer
Faraday rotator
Forward direction
Incident light
Reversed direction
11
Polarization-independent isolator
12
Component 6WDMwavelength division multiplexing
  • WDM technique can increase communication capacity
    by transmitting many different light signal of
    different wavelength simultaneously.
  • Fiber cables can utilize wavelength region from
    1450 to1650nm since the transmission loss is
    very low (less than 0.3dB/km) in this region.

13
Optical add-drop
  • Optical add-drop can separately drop desired
    wavelength from multiplexed-signal network or can
    add a particular wavelength to the network

14
Optoelectronic integrated circuits (OEIC)
  • Integration of optical and electronic
    semiconductor devices
  • Two types of OEIC exist
  • One is integration of light emitting devices
    (example LD) and driving FET circuits
  • The other is integration of optical detection
    device like PD and electronic circuits for
    amplification and signal processing
  • Compound semiconductors such as GaAs-based and
    InP-based alloy semiconductors are used.

http//www2.nsknet.or.jp/azuma/o/o0028.htm
15
Magneto-optical circulator
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