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Carbon Nanotube Field Effect Transistors Probed by Scanning Photocurrent Microscopy

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Photoconductivity in CNTs. dark. I. Vds. laser on. S. D. Freitag et al, Nano Lett 3 (2003) 1067. ... Photoconductivity in CNTs. Estimation of the potential profile? ... – PowerPoint PPT presentation

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Title: Carbon Nanotube Field Effect Transistors Probed by Scanning Photocurrent Microscopy


1
Carbon Nanotube Field Effect Transistors Probed
by Scanning Photocurrent Microscopy
Max Planck Institute for Solid State
Research Nanoscale Science Department Heisenbergst
rasse 1, 70569 Stuttgart, Germany http//www.fkf.m
pg.de/kern
  • Eduardo J. H. Lee, Kannan Balasubramanian, Marko
    Burghard and Klaus Kern

2
Outline
  • What is Scanning Photocurrent Microscopy?
  • How is SPCM useful to characterize carbon
    nanotube devices?
  • Study of single CNT devices.
  • Preliminary experiments on carbon nanotube
    networks.

3
Carbon nanotube field-effect transistors (CNFETs)
CVD-grown CNTs
4
Photoconductivity in CNTs
S
D
5
Photoconductivity in CNTs
Estimation of the potential profile?!?
6
Scanning Photocurrent Microscopy
7
SPCM characterization
8
Bias dependence
Vgs 10V n-type
see also Y. Ahn et al., Nano Lett. (2005)
9
Gate dependence
Vds 0.7 V
10
Gate dependence
D
D
D
E. J. H. Lee et al, Small 3 (2007) 2038.
11
Carbon Nanotube Networks
12
CNT Junctions
  • S-S junction

13
CNT Junctions
14
CNT Junctions
15
CNT Junctions
16
Conclusions
  • SPCM is shown to be an interesting tool to
    estimate the electrostatic potential profile on
    CNT devices.
  • Intertube heterojunctions were directly observed
    through the photocurrent measurements and seem to
    play an important role, especially in the OFF
    state of CNT junction and network devices.

17
Acknowledgements
  • Nan Fu and Prof. Alf Mews (University of Siegen)
    for providing the CVD-grown CNT samples.
  • Thank you all for your attention.

18
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19
Chemical doping?
20
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