Technical Needs for Hybrid Integration of IIIV Optical Materials on Si

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• Technical Needs for Hybrid Integration of III-V
  Optical Materials on Si
• Wafer Bonding
• Layer Splitting

• Layer Splitting Techniques
• 1. Epitaxial lift-off (ELO)
• Growth of a etch release layer in device
  structures (not always possible)
• Wet etching (inefficient and incompatible with
  semiconductor processing)
• 2. Laser lift-off (LLO)
• Transferred layer grown on a transparent
  substrate (not always possible)
• Laser irradiation for layer separation
  (inadequate for large scale production)
• 3. Ion beam induced layer splitting- Smart-Cut
• Hydrogen/helium ion implantation
• Ease control over layer splitting, e.g. layer
  thickness, layer patterns
• Suitable for any crystals
• Efficient, cost-effective and fully compatible
  with semiconductor processing

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Smart Cut a high-yield layer splitting
technology
H/He ion implant

• H/He ion implantation
• Cleaning bonding (RT)
• Annealing for cleaving (lt 600C)
• CMP touch polish

GaAs
Si
GaAs thin film on Si
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H/He Implant
Layer splitting and pattern formation on GaAs
using Smart-Cut
Thermal annealing
T350 C for 3 min, ramping rate 50 C/s
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Challenge
Ion beam damage to III-V based optical materials
Degradation in luminescence from InAs quantum
dots embedded in GaAs irradiated by 1.0 MeV H
ion beams
Thermal annealing of irradiated InAs quantum
dots embedded in GaAs
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Solution patterned implant for protection of
III-V optical devices
Step 1
Step 2
Step 3
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• Research Directions
• Simultaneous transfer of ion beam irradiated and
  unirradiated regions onto Si (on-going
  experiments)
• Integration of VCSELs (including the 1.5 ?m
  InGaAsP/InP emitter) on Si
• Surface modifications of bonding surfaces for
  better improvements in laser performance, e.g.
  decreasing thermal expansion differences between
  III-V materials and Si