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Title: 280 GHz fT InP DHBT with 1.2 mm2 base-emitter junction area in MBE Regrown-Emitter Technology - PowerPoint PPT Presentation
Description: Tel: (704)319-2033; ywei_at_rfmd.com. Motivation for Regrown-Emitter HBT: InP vs. Si/SiGe ... 4 inch Si wafer uniformity testing. refractive index measurement ... – PowerPoint PPT presentation
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